INSITU CONDUCTIVITY AND HALL MEASUREMENTS OF ULTRATHIN NICKEL SILICIDE LAYERS ON SILICON(111)

被引：27

作者：

JENTZSCH, F ^{[1
]}

FROITZHEIM, H ^{[1
]}

THEILE, R ^{[1
]}

机构：

[1] UNIV HANOVER,INST FESTKORPERPHYS,D-3000 HANOVER 1,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5901 / 5907

页数：7

共 19 条

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