MEASUREMENT OF DEEP LEVELS USING C-V TECHNIQUES

被引:5
作者
LAMBERT, LM
KUMP, HJ
机构
[1] IBM CORP, SYST PROD DIV, Essex Jct, VT USA
[2] UNIV VERMONT, BURLINGTON, VT USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 01期
关键词
D O I
10.1002/pssa.2210210125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:235 / 245
页数:11
相关论文
共 29 条
[1]  
BLAKEMORE DS, 1969, SOLID STATE PHYS
[2]  
BULTHUIS K, 1965, PHILIPS RES REP, V20, P415
[3]   PROPERTIES OF GOLD DOPED MOS STRUCTURES [J].
CAGNINA, SF ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) :1165-+
[4]  
FAHNER W, 1972, APPL PHYS LETT, V21, P329
[5]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[7]  
GOETZBER.A, 1966, AT&T TECH J, V45, P1097
[8]   MOS AVALANCHE AND TUNNELING EFFECTS IN SILICON SURFACES [J].
GOETZBERGER, A ;
NICOLLIA.FH .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4582-+
[9]  
GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444
[10]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI