MEASUREMENT OF DEEP LEVELS USING C-V TECHNIQUES

被引:5
作者
LAMBERT, LM
KUMP, HJ
机构
[1] IBM CORP, SYST PROD DIV, Essex Jct, VT USA
[2] UNIV VERMONT, BURLINGTON, VT USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 01期
关键词
D O I
10.1002/pssa.2210210125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:235 / 245
页数:11
相关论文
共 29 条
[11]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[12]   SIMPLE PHYSICAL MODEL FOR SPACE-CHARGE CAPACITANCE OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
SAH, CT ;
SNOW, EH ;
DEAL, BE .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) :2458-&
[13]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[14]   PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].
HOFSTEIN, SR ;
WARFIELD, G .
SOLID-STATE ELECTRONICS, 1965, 8 (03) :321-+
[15]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[16]   SOME ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE SYSTEM [J].
LAMB, DR .
THIN SOLID FILMS, 1970, 5 (04) :247-&
[17]  
Many A., 1965, SEMICONDUCTOR SURFAC
[18]   EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .2. GOLD IN SILICON [J].
NATHAN, MI ;
PAUL, W .
PHYSICAL REVIEW, 1962, 128 (01) :38-&
[19]   LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].
NICOLLIAN, EH ;
GOETZBERGER, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+
[20]  
PUTLEY EH, 1968, HALL EFFECT SEMICOND