GATE CURRENT INJECTION INITIATED BY ELECTRON BAND-TO-BAND TUNNELING IN MOS DEVICES

[1] A NEW 3-TERMINAL TUNNEL DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 347 - 349

[2] LEAKAGE MECHANISMS IN THE TRENCH TRANSISTOR DRAM CELL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 108 - 116

[3] Chan T. Y., 1987, IEDM TECH DIG, P718

[4] Chang C., 1987, IEDM TECH DIG, P714

[5] Chen I. C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P660

[6] INTERFACE-TRAP ENHANCED GATE-INDUCED LEAKAGE CURRENT IN MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 216 - 218

[7] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[8] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[9] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[10] MODELING OF SUBSTRATE CURRENT IN PARA-MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 413 - 416

[1] A NEW 3-TERMINAL TUNNEL DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 347 - 349

[2] LEAKAGE MECHANISMS IN THE TRENCH TRANSISTOR DRAM CELL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 108 - 116

[3] Chan T. Y., 1987, IEDM TECH DIG, P718

[4] Chang C., 1987, IEDM TECH DIG, P714

[5] Chen I. C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P660

[6] INTERFACE-TRAP ENHANCED GATE-INDUCED LEAKAGE CURRENT IN MOSFET [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 216 - 218

[7] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[8] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[9] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 273 - 282

[10] MODELING OF SUBSTRATE CURRENT IN PARA-MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 413 - 416