FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM

[31] VMOS TECHNOLOGY APPLIED TO DYNAMIC RAMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 617 - 622

[32] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &

[33] KOTECHA H, 1980, DEC IEEE INT EL DEV, P724

[34] A SILICON AND ALUMINUM DYNAMIC MEMORY TECHNOLOGY [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (03) : 268 - 282

[35] NOBLE WP, 1976, DEC IEDM, P582

[36] 2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) : 35 - 45

[37] Semi-conductor theory in barrier layers. [J]. NATURWISSENSCHAFTEN, 1938, 26 : 843 - 843

[38] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[39] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679

[40] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 857 - 862

[31] VMOS TECHNOLOGY APPLIED TO DYNAMIC RAMS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 617 - 622

[32] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &

[33] KOTECHA H, 1980, DEC IEEE INT EL DEV, P724

[34] A SILICON AND ALUMINUM DYNAMIC MEMORY TECHNOLOGY [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (03) : 268 - 282

[35] NOBLE WP, 1976, DEC IEDM, P582

[36] 2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) : 35 - 45

[37] Semi-conductor theory in barrier layers. [J]. NATURWISSENSCHAFTEN, 1938, 26 : 843 - 843

[38] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[39] COMPUTER-AIDED 2-DIMENSIONAL ANALYSIS OF BIPOLAR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 669 - 679

[40] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (10) : 857 - 862