TEMPERATURE-DEPENDENCE OF ION-BEAM MIXING IN GAAS, ALAS, AND GAAS/ALAS/GAAS

被引：12

作者：

KLATT, JL ^{[1
]}

AVERBACK, RS ^{[1
]}

FORBES, DV ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion beam mixing of AlAs markers in GaAs and GaAs markers in AlAs has been measured as a function of irradiation temperature with 1 MeV Kr ions. The mixing parameter in the GaAs matrix was almost-equal-to 140 angstrom5/eV at temperatures between 110 and 473 K, but dropped to almost-equal-to 120 angstrom5/eV at 573 K. The value was smaller in the AlAs matrix, almost-equal-to 90 angstrom5/eV between 110 and 473 K, but it increased to almost-equal-to 120 angstrom5/eV between 473 and 625 K. Ion beam mixing in a trilayer sample, GaAs/AlAs/GaAs, was also measured for comparison. At the deeper interface, AlAs on GaAs, and low temperature, the mixing parameter was 440 angstrom5/eV, but only 250 angstrom5/eV at the other interface, GaAs on AlAs. Mixing at the lower inter-face decreased at 573 K to 160 angstrom5/eV while it decreased at 473 K at the other interface to 110 angstrom5/eV. These results are interpreted on the basis of the influence of crystal structure on ion beam mixing.

引用

页码：976 / 978

页数：3

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