FLATTENING TRANSITION ON GAAS (411)A SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY

被引：16

作者：

YAMAGUCHI, H

YAMADA, T

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Kanagawa, 243-01, Morinosato-Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

STM; GAAS; RECONSTRUCTION; PHASE TRANSITION; SURFACE FLATTNESS; QUANTUM WELL;

D O I：

10.1143/JJAP.34.L1490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the atomic structures of GaAs (411)A surfaces by using scanning tunneling microscopy, and have found that the surface flatness largely depends on the As coverage. In contrast to the As-rich surface, which has no flat (411)A terraces but has (311)A and (511)A microfacets, the As-deficient surface shows flat (411)A terraces with 0.07-nm-high monomolecular steps. The detailed analysis based on the observed atomic arrangements indicates that the flattening transition can occur because the electron counting rule is broken at all monomolecular steps on the As-deficient surface.

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收藏

页码：L1490 / L1493

页数：4

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