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THERMODYNAMIC FACTOR INFLUENCING THE GROWTH-RATE AND PURITY OF EPITAXIAL LAYERS IN THE GA-ASCL3-H2 SYSTEM
被引:11
作者
:
MORIZANE, K
论文数:
0
引用数:
0
h-index:
0
MORIZANE, K
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1978年
/ 45卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(78)90429-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:164 / 170
页数:7
相关论文
共 15 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 932
-
&
[2]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 189
-
+
[3]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[4]
THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
论文数:
0
引用数:
0
h-index:
0
FERGUSSON, RR
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(05)
: 585
-
592
[5]
Hurle D. T. J., 1967, CRYSTAL GROWTH
[6]
REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS
KIRWAN, DJ
论文数:
0
引用数:
0
h-index:
0
KIRWAN, DJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
: 1572
-
&
[7]
VARIATION OF CARRIER CONCENTRATION OF EPITAXIAL GAAS WITHOUT ADDITION OF DOPANTS
KNAPPETT, JE
论文数:
0
引用数:
0
h-index:
0
KNAPPETT, JE
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(03)
: 185
-
&
[8]
NOZAKI T, 1975, I PHYS C SER, V24, P46
[9]
ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL
SEDGWICK, TO
论文数:
0
引用数:
0
h-index:
0
SEDGWICK, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1381
-
1383
[10]
THERMODYNAMIC STUDY OF GROWTH RATE OF EPITAXIAL GAAS BY GAAS/ASCL3/H2 SYSTEM
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
MORIYAMA.K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA.K
MATUMOTO, S
论文数:
0
引用数:
0
h-index:
0
MATUMOTO, S
URAMOTO, M
论文数:
0
引用数:
0
h-index:
0
URAMOTO, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(06)
: 785
-
&
←
1
2
→
共 15 条
[1]
THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH
BOUCHER, A
论文数:
0
引用数:
0
h-index:
0
BOUCHER, A
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
HOLLAN, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 932
-
&
[2]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 189
-
+
[3]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[4]
THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
论文数:
0
引用数:
0
h-index:
0
FERGUSSON, RR
GABOR, T
论文数:
0
引用数:
0
h-index:
0
GABOR, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(05)
: 585
-
592
[5]
Hurle D. T. J., 1967, CRYSTAL GROWTH
[6]
REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS
KIRWAN, DJ
论文数:
0
引用数:
0
h-index:
0
KIRWAN, DJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
: 1572
-
&
[7]
VARIATION OF CARRIER CONCENTRATION OF EPITAXIAL GAAS WITHOUT ADDITION OF DOPANTS
KNAPPETT, JE
论文数:
0
引用数:
0
h-index:
0
KNAPPETT, JE
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(03)
: 185
-
&
[8]
NOZAKI T, 1975, I PHYS C SER, V24, P46
[9]
ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL
SEDGWICK, TO
论文数:
0
引用数:
0
h-index:
0
SEDGWICK, TO
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1381
-
1383
[10]
THERMODYNAMIC STUDY OF GROWTH RATE OF EPITAXIAL GAAS BY GAAS/ASCL3/H2 SYSTEM
SEKI, H
论文数:
0
引用数:
0
h-index:
0
SEKI, H
MORIYAMA.K
论文数:
0
引用数:
0
h-index:
0
MORIYAMA.K
MATUMOTO, S
论文数:
0
引用数:
0
h-index:
0
MATUMOTO, S
URAMOTO, M
论文数:
0
引用数:
0
h-index:
0
URAMOTO, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(06)
: 785
-
&
←
1
2
→