Site control of metal droplet formation on CaF2 surface using a focused electron beam

被引:7
作者
Kawasaki, K
Uejima, K
Tsutsui, K
机构
[1] Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-ku, Yokohama, 226
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期
关键词
site control; droplet formation; focused electron beam; surface modification; Ga; CaF2; nanofabrication;
D O I
10.1143/JJAP.34.6846
中图分类号
O59 [应用物理学];
学科分类号
摘要
Site-controlled Ga droplet formation using modification of fluoride surface by electron beam exposure was investigated as a new nanofabrication technique. A single line of Ga droplets of approximately 10 nm diameter on CaF2 was obtained using a linearly scanned focused electron beam. The fluctuation of their position from the centerline was found to be about +/-20 mu, which was smaller than the estimated beam spot size. The mechanism of this site control effect was discussed using tire model of potential on the CaF2 surface for Ca atom adsorption.
引用
收藏
页码:6846 / 6852
页数:7
相关论文
共 18 条
[1]   FORMATION OF COHERENTLY STRAINED SELF-ASSEMBLED INP QUANTUM ISLANDS ON INGAP/GAAS(001) [J].
DENBAARS, SP ;
REAVES, CM ;
BRESSLERHILL, V ;
VARMA, S ;
WEINBERG, WH ;
PETROFF, PM .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :721-727
[2]   SURFACE MODIFICATION OF CAF2 IN ATOMIC LAYER SCALE BY ELECTRON-BEAM EXPOSURE [J].
HWANG, SM ;
IZUMI, A ;
TSUTSUI, K ;
FURUKAWA, S .
APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) :523-527
[3]   INAS ISLAND FORMATION ALIGNED ALONG THE STEPS ON A GAAS(001) VICINAL SURFACE [J].
IKOMA, N ;
OHKOUCHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (6B) :L724-L726
[4]  
IZUMI A, IN PRESS APPL PHYS L
[5]   OPTICAL ABSORPTION INTENSITIES OF RARE-EARTH IONS [J].
JUDD, BR .
PHYSICAL REVIEW, 1962, 127 (03) :750-&
[6]   SELECTIVE GROWTH OF WIRE STRUCTURES OF GAAS ON CAF2 USING FOCUSED ELECTRON-BEAMS [J].
KAWASAKI, K ;
TSUTSUI, K ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :914-918
[7]   ELECTRICAL PROPERTIES OF SEMICONDUCTING CDF2 - Y [J].
KHOSLA, RP .
PHYSICAL REVIEW, 1969, 183 (03) :695-&
[8]   FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH [J].
KITAMURA, M ;
NISHIOKA, M ;
OSHINOWO, J ;
ARAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B) :4376-4379
[9]   ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES [J].
LEE, HC ;
ASANO, T ;
ISHIWARA, H ;
FURUKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (09) :1616-1625
[10]   SPATIAL DISTRIBUTION OF BACKSCATTERED ELECTRONS IN SCANNING ELECTRON-MICROSCOPE AND ELECTRON-MICROPROBE [J].
MURATA, K .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :4110-4117