FORMATION OF INGAAS QUANTUM DOTS ON GAAS MULTI-ATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH

被引：12

作者：

KITAMURA, M

NISHIOKA, M

OSHINOWO, J

ARAKAWA, Y

机构：

[1] Institute of Industrial Science, University ofTokyo, Minato-ku, Tokyo, 106

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

SELF-ALIGNMENT; INGAAS QUANTUM DOTS; MULTI-ATOMIC STEP; STRAIN; INGAAS/GAAS;

D O I：

10.1143/JJAP.34.4376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aligned InGaAs quantum dots as small as 20 nm were naturally formed at multi-atomic step edges by metalorganic chemical vapor deposition growth. In addition, it was found that anisotropic structure of InGaAs along the step edges toward the [110]A direction appears with the increase of growth time of InGaAs. This phenomenon may be useful in the formation of quantum wires.

引用

页码：4376 / 4379

页数：4

共 18 条

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