REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) OSCILLATIONS AT 77-K

[31] JALOCHOWSKI M, 1988, J APPL PHYS, V63, P1501

[32] THE APPLICATION OF RHEED INTENSITY EFFECTS TO INTERRUPTED GROWTH AND INTERFACE FORMATION DURING MBE GROWTH OF GAAS/(AL, GA)AS STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03): : 255 - 260

[33] SURFACE EFFECTS AND GROWTH DYNAMICS IN MBE OF III-V COMPOUNDS [J]. SURFACE SCIENCE, 1986, 178 (1-3) : 110 - 123

[34] RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 423 - 438

[35] THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 1 - 9

[36] KAWAMURA T, 1984, SURF SCI, V148, pL671, DOI 10.1016/0039-6028(84)90574-0

[37] KAWAMURA T, 1986, SURF SCI, V171, pL409, DOI 10.1016/0039-6028(86)90552-2

[38] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 739 - 741

[39] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY OF NI ON W(110) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 901 - 903

[40] THE TEMPORAL BEHAVIOR OF REFLECTION-HIGH-ENERGY-ELECTRON-DIFFRACTION INTENSITY AND IMPLICATIONS FOR GROWTH-KINETICS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS/ALXGA1-XAS(100) MODULATED STRUCTURES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 55 - 64

[31] JALOCHOWSKI M, 1988, J APPL PHYS, V63, P1501

[32] THE APPLICATION OF RHEED INTENSITY EFFECTS TO INTERRUPTED GROWTH AND INTERFACE FORMATION DURING MBE GROWTH OF GAAS/(AL, GA)AS STRUCTURES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03): : 255 - 260

[33] SURFACE EFFECTS AND GROWTH DYNAMICS IN MBE OF III-V COMPOUNDS [J]. SURFACE SCIENCE, 1986, 178 (1-3) : 110 - 123

[34] RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 423 - 438

[35] THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 1 - 9

[36] KAWAMURA T, 1984, SURF SCI, V148, pL671, DOI 10.1016/0039-6028(84)90574-0

[37] KAWAMURA T, 1986, SURF SCI, V171, pL409, DOI 10.1016/0039-6028(86)90552-2

[38] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 739 - 741

[39] INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY OF NI ON W(110) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 901 - 903

[40] THE TEMPORAL BEHAVIOR OF REFLECTION-HIGH-ENERGY-ELECTRON-DIFFRACTION INTENSITY AND IMPLICATIONS FOR GROWTH-KINETICS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS/ALXGA1-XAS(100) MODULATED STRUCTURES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 55 - 64