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INDIUM CHANNEL IMPLANT FOR IMPROVED SHORT-CHANNEL BEHAVIOR OF SUBMICROMETER NMOSFETS

被引：68
作者：
SHAHIDI, GG
DAVARI, B
BUCELOT, TJ
RONSHEIM, PA
COANE, PJ
POLLACK, S
BLAIR, CR
CLARK, B
HANSEN, HH
机构：
[1] IBM CORP,ANALYT SERV,HOPEWELL JCT,NY 12533
[2] IBM CORP,DIV TECHNOL PROD,BURLINGTON,VT 05452
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 08期
关键词：
D O I：
10.1109/55.225595
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium has been used as an alternative channel implant in submicrometer channel Si MOSFET's, in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to L = 0.17-mum channel length. The device characteristics have been compared to uniform boron-implanted short-channel MOSFET's used in a 0.25-mum CMOS technology. Results indicate that nMOSFET's with nonuniform channel doping obtained by indium have superior short-channel effect (SCE) when compared to nMOSFET's with uniformly (boron) doped channel.
引用
收藏
页码：409 / 411
页数：3
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