MASKING CONSIDERATIONS IN CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS/ALGAAS LASER STRUCTURES

被引：15

作者：

BEHFARRAD, A

WONG, SS

DAVIS, RJ

WOLF, ED

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096742

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：779 / 782

页数：4

共 14 条

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[10] DOUBLE HETEROSTRUCTURE LASERS WITH FACETS FORMED BY A HYBRID WET AND REACTIVE-ION-ETCHING TECHNIQUE [J].

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