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PROPERTIES OF ULTRA-THIN WAFER-BONDED SILICON-ON-INSULATOR MOSFETS

被引：50
作者：
MAZHARI, B
CRISTOLOVEANU, S
IOANNOU, DE
CAVIGLIA, AL
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742
[2] GEORGE MASON UNIV,DEPT ELECT & COMP ENGN,FAIRFAX,VA 22030
[3] ALLIED SIGNAL CORP,CTR AEROSP TECHNOL,COLUMBIA,MD 21045
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期
关键词：
D O I：
10.1109/16.81619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of MOS transistors fabricated in ultra-thin (50-70 nm) wafer-bonded SOI films are reported. Strong interface coupling effects are found to govern the properties of the front and back channels. Simple theoretical models are proposed which explain the substantial variations of the transconductance and subthreshold slope as the opposite interface is scanned from inversion to total depletion and accumulation. These MOSFET's behave very well and demonstrate that high-carrier mobilities and low densities of defects can be obtained at both interfaces even in ultra-thin SOI structures.
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收藏
页码：1289 / 1295
页数：7
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