AMMONIUM SULFIDE PASSIVATION FOR ALGAAS/GAAS BURIED HETEROSTRUCTURE LASER FABRICATION PROCESS

被引：23

作者：

TAMANUKI, T

KOYAMA, F

IGA, K

机构：

[1] Research Laboratory of Precision Machinery Electronics, Institute of Technology, Yokohama, 227, 4259 Nagatsuta, Midori-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 03期

关键词：

AMMONIUM SULFIDE PASSIVATION; MOCVD; MICRO-FABRICATION;

D O I：

10.1143/JJAP.30.499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have introduced ammonium sulfide ((NH4)2S(x)/(NH4)2S) treatment to reduce the surface recombination in the regrowth process of an AlGaAs/GaAs buried heterostructure (BH) laser by MOCVD. The (NH4)2S(x)-treated BH lasers showed much lower threshold current than BH lasers without the chemical passivation. This fabrication technology is expected to be very effective for the realization of ultralow-threshold micro-cavity lasers with a few-micron or submicron cavity structure.

引用

页码：499 / 500

页数：2

共 7 条

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