MISFIT DISLOCATIONS IN (110), (112), AND (113) HOMOEPITAXIAL SILICON CRYSTALS

被引：4

作者：

TAMURA, M

SUGITA, Y

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

[2] HITACHI LTD,SEMICOND & INTEGRATED CIRCUITS DIV,KODAIRA,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.1662782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3442 / 3444

页数：3

共 9 条

[1] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[2] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216

[3]

HOLT DB, 1966, PHYS CHEM SOLIDS, V27, P1053

[4] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[5] OBSERVATION OF DIFFUSION-INDUCED DISLOCATION LINES IN SILICON THROUGH OPTICAL MICROSCOPY [J].

JOSHI, ML ;

WILHELM, FJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2593-&

[6]

LEVINE E, 1967, J APPL PHYS, V38, P81, DOI 10.1063/1.1709015

[7] MISFIT DISLOCATIONS IN BICRYSTAL SYSTEM SILICON-BORON-DOPED SILICON [J].

SUGITA, Y ;

TAMURA, M ;

SUGAWARA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :585-&

[8] MISFIT DISLOCATIONS IN BICRYSTALS OF EPITAXIALLY GROWN SILICON ON BORON-DOPED SILICON SUBSTRATES [J].

SUGITA, Y ;

TAMURA, M ;

SUGAWARA, K .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3089-&

[9] DISTRIBUTION AND CHARACTER OF MISFIT DISLOCATIONS IN HOMOEPITAXIAL SILICON CRYSTALS [J].

TAMURA, M ;

SUGITA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) :368-&

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