PROGRESS TOWARDS QUANTITATIVE HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：7

作者：

SMITH, DJ ^{[1
]}

DERUIJTER, WJ ^{[1
]}

MCCARTNEY, MR ^{[1
]}

WEISS, JK ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

ULTRAMICROSCOPY | 1993年 / 52卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0304-3991(93)90078-C

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In recent years there has been a great upsurge of applications involving quantitative high-resolution electron microscopy, in particular comparing experimental micrographs with image simulations for determination of defect structures. Emphasis has been given to the determination of experimental parameters, the utilization of slow-scan CCD cameras for digital recording and extraction of quantitative structural and chemical information. More attention to surface cleanliness is needed to improve signal quality and the possibility of electron irradiation damage should not be overlooked. Issues related to adoption of a reliability or R-factor are briefly discussed.

引用

页码：591 / 601

页数：11

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