SOME NEW APPROACHES TO SHALLOW IMPURITY STATES

被引:12
作者
TEFFT, WE
BELL, RJ
ROMERO, HV
机构
[1] Department of Physics, University of Missouri-Rolla, Rolla
[2] Physics Department, Materials Research Center, University of Missouri-Rolla, Rolla
[3] Physics Department, University of Missouri-Rolla, Rolla
来源
PHYSICAL REVIEW | 1969年 / 177卷 / 03期
关键词
D O I
10.1103/PhysRev.177.1194
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A variational calculation of shallow surface impurity states including image-charge and anisotropic mass effects was performed using two different sets of orthogonal functions. The first set was obtained by varying the Bohr radius in the hydrogenic functions, separately for each state. In the second set the Bohr radius was allowed to become anisotropic and the elements were separately treated as variational parameters. In each case it was shown that with certain restrictions on the variational parameters the set remained complete and orthogonal. General expressions for the energy eigenvalues for both the bulk and surface problem obtained from the first set of functions are presented, and numerical results for Si and Ge are given for each set of trail functions. Previously published bulk eigenvalues for Si and Ge were corrected for orthogonality. © 1969 The American Physical Society.
引用
收藏
页码:1194 / +
页数:1
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