X-RAY-ANALYSIS OF THIN GEXCYOZ-H FILMS

Investigations by means of x-ray photoelectron spectrometry, electron probe microanalysis, x-ray fluorescence analysis, imaging x-ray fluorescence analysis, x-ray diffraction and secondary ion mass spectrometry were performed to quantify thin GexCyOz:H films. The films were prepared by r.f plasma deposition of tetraethylgermanium in parallel-plate system and in a two-rod discharge system with magnetron enhancement. The results of these investigations indicated that depth profiling delivers homogeneous composition, with the exception of the outermost surface. At a constant flow-rate of tetraethylgermanium, the film density and the Ge/C atomic ratio increase with increasing r.f. power density towards a maximum of 3.5 g cm-3 and 0.5, respectively. The hydrogen content does not change significantly. At low r.f. power densities there is a considerable increase in oxygen. There is no evidence for crystalline germanium carbide. Magnetron enhancement causes an increasing deposition rate and an inhomogeneous deposition in the lateral direction of the films.