HIGH-PERFORMANCE GAAS POWER MESFET WITH ALGAAS BUFFER LAYER

被引：6

作者：

KIM, B

WURTELE, M

SHIH, HD

TSERNG, HQ

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 19期

关键词：

D O I：

10.1049/el:19870707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1008 / 1010

页数：3

共 6 条

[1] MICROWAVE PERFORMANCE OF GAAS-MESFETS WITH ALGAAS BUFFER LAYERS - EFFECT OF HETEROINTERFACES [J].

ARNOLD, D ;

KOPP, W ;

FISCHER, R ;

HENDERSON, T ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :82-84

[2] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J].

BOCCONGIBOD, D ;

ANDRE, JP ;

BAUDET, P ;

HALLAIS, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1141-1147

[3]

GHOSH CL, 1984, IEEE ELECTR DEVICE L, V5, P3, DOI 10.1109/EDL.1984.25809

[4] VERY HIGH-TRANSCONDUCTANCE SHORT-CHANNEL GAAS-MESFETS WITH GA0.3AL0.7AS BUFFER LAYER [J].

LEE, KY ;

ALMUDARES, M ;

BEAUMONT, SP ;

WILKINSON, CDW ;

FROST, J ;

STANLEY, CR .

ELECTRONICS LETTERS, 1987, 23 (01) :11-12

[5]

Mishra U. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P829

[6] SUPERLATTICE BUFFERS FOR GAAS POWER MESFETS GROWN BY MBE [J].

SCHAFF, WJ ;

EASTMAN, LF ;

VANREES, B ;

LILES, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :265-268

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