VERY HIGH-TRANSCONDUCTANCE SHORT-CHANNEL GAAS-MESFETS WITH GA0.3AL0.7AS BUFFER LAYER

被引：7

作者：

LEE, KY

ALMUDARES, M

BEAUMONT, SP

WILKINSON, CDW

FROST, J

STANLEY, CR

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 01期

关键词：

GALLIUM ALUMINUM ARSENIDE - SHORT-CHANNEL MESFETS - SHORT-GATE-LENGTH MESFETS;

D O I：

10.1049/el:19870008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：11 / 12

页数：2

共 13 条

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[2] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET [J].

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TOMIZAWA, K ;

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KAWASHIMA, M .

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[3] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J].

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BROCKERHOFF, W ;

HEIME, K ;

CAPPY, A .

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[4]

FENG YK, 1985, ELECTRON LETT, V21, P453, DOI 10.1049/el:19850323

[5]

GHOSH CL, 1984, IEEE ELECTR DEVICE L, V5, P3, DOI 10.1109/EDL.1984.25809

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[7] SCALED GAAS-MESFETS WITH GATE LENGTH DOWN TO 100 NM [J].

JAECKEL, H ;

GRAF, V ;

VANZEGHBROECK, BJ ;

VETTIGER, P ;

WOLF, P .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :522-524

[8] CHARACTERISTICS OF SUB-MICRON GATE GAAS-FETS WITH AL0.3GA0.7AS BUFFERS - EFFECTS OF INTERFACE QUALITY [J].

KOPP, W ;

MORKOC, H ;

DRUMMOND, TJ ;

SU, SL .

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[9] LOW-TEMPERATURE ANNEALED CONTACTS TO VERY THIN GAAS EPILAYERS [J].

PATRICK, W ;

MACKIE, WS ;

BEAUMONT, SP ;

WILKINSON, CDW .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :986-988

[10] VERY SHORT GATE-LENGTH GAAS-MESFETS [J].

PATRICK, W ;

MACKIE, WS ;

BEAUMONT, SP ;

WILKINSON, CDW ;

OXLEY, CH .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :471-472

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