BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS

被引：26

作者：

FENG, SL

KRYNICKI, J

DONCHEV, V

BOURGOIN, JC

DIFORTEPOISSON, M

BRYLINSKI, C

DELAGE, S

BLANCK, H

ALAYA, S

机构：

[1] DOMAINE CORBEVILLE,THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

[2] FAC SCI & TECH MONASTIR,DEPT PHYS,MONASTIR 5000,TUNISIA

[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

[4] INST NUCL CHEM & TECHNOL,PL-03195 WARSAW,POLAND

[5] UNIV SOFIA,DEPT SOLID STATE PHYS & MICRO ELECTR,BU-1126 SOFIA,BULGARIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 12期

关键词：

D O I：

10.1088/0268-1242/8/12/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways. The value obtained (0.24-0.25 eV) has been verified by photoluminescence and photoluminescence excitation on a 90 angstrom thick GaAs well in GaInP grown under the same conditions.

引用

页码：2092 / 2096

页数：5

共 14 条

[1] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BISWAS, D ;

DEBBAR, N ;

BHATTACHARYA, P ;

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :833-835

[2]

CHAABANE H, UNPUB

[3]

FENT SL, 1993, J APPL PHYS, V74, P3410

[4]

FORREST SR, 1987, HETEROJUNCTION BAND

[5]

HAASE MA, 1981, APPL PHYS LETT, V58, P616

[6]

KOBAYASHI T, 1989, J APPL PHYS, V65, P4895

[7] TWO-DIMENSIONAL ELECTRON-GAS AT GAAS/GA0.52IN0.48P HETEROINTERFACE GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J].

KODAMA, K ;

HOSHINO, M ;

KITAHARA, K ;

TAKIKAWA, M ;

OZEKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L127-L129

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130

[9] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[10] DEFECTS IN EPITAXIAL SI-DOPED GAINP [J].

KRYNICKI, J ;

ZAIDI, MA ;

ZAZOUI, M ;

BOURGOIN, JC ;

DIFORTEPOISSON, M ;

BRYLINSKI, C ;

DELAGE, SL ;

BLANCK, H .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :260-266

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