BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS

被引：26

作者：

FENG, SL

KRYNICKI, J

DONCHEV, V

BOURGOIN, JC

DIFORTEPOISSON, M

BRYLINSKI, C

DELAGE, S

BLANCK, H

ALAYA, S

机构：

[1] DOMAINE CORBEVILLE,THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

[2] FAC SCI & TECH MONASTIR,DEPT PHYS,MONASTIR 5000,TUNISIA

[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

[4] INST NUCL CHEM & TECHNOL,PL-03195 WARSAW,POLAND

[5] UNIV SOFIA,DEPT SOLID STATE PHYS & MICRO ELECTR,BU-1126 SOFIA,BULGARIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 12期

关键词：

D O I：

10.1088/0268-1242/8/12/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways. The value obtained (0.24-0.25 eV) has been verified by photoluminescence and photoluminescence excitation on a 90 angstrom thick GaAs well in GaInP grown under the same conditions.

引用

页码：2092 / 2096

页数：5

共 14 条

[11] THE CHARACTERISTICS OF AN IN0.5GA0.5P AND IN0.5GA0.5P/GAAS HETEROJUNCTION GROWN ON A (100) GAAS SUBSTRATE BY LIQUID-PHASE EPITAXY [J].