HIGH-FIELD CURRENT-VOLTAGE CHARACTERISTICS OF SEMIINSULATING GAAS

被引:6
作者
KUHNEL, G
SIEGEL, W
SCHNEIDER, HA
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期
关键词
D O I
10.1002/pssa.2211000133
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:283 / 287
页数:5
相关论文
共 15 条
[11]   ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].
NORTHROP, DC ;
THORNTON, PR ;
TREZISE, KE .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :17-&
[12]   EXPERIMENTAL STUDY OF HIGH-FIELD MOVING DOMAINS PRODUCED BY DEEP CENTRES IN SEMI-INSULATING GAAS [J].
SACKS, HK ;
MILNES, AG .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 30 (01) :49-&
[13]   LOW FREQUENCY OSCILLATIONS IN SEMI-INSULATING GALLIUM ARSENIDE [J].
SACKS, HK ;
MILNES, AG .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1970, 28 (06) :565-+
[14]   CONTACTS FOR ELECTRICAL CHARACTERIZATION OF SEMIINSULATING GAAS [J].
SIEGEL, W ;
KUHNEL, G ;
FELIX, S ;
SCHNEIDER, HA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :K211-K214
[15]  
STOCKMANN F, 1969, FESTKORPERPROBLEME, V9, P138