RAMAN MICROPROBE ANALYSIS OF GAAS WAFERS

被引：5

作者：

JIMENEZ, J

GONZALEZ, MA

MARTIN, B

CALVO, B

机构：

[1] Fisica de la Materia Condensada, Facultad de Ciencias

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90169-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Raman microprobe is used for studying the crystalline features of the chemically etched semi-insulating LEC (liquid encapsulated Czochralski) GaAs wafers with a spatial resolution approaching 1 μm. This study reveals the existence of residual compressive stress, which is associated with the existence of excess interstitial arsenic at the walls and in the central regions of the cells. The observation of the arsenic Raman bands (257 and 200 cm-1) after laser heating at 200-250°C seems to confirm the arsenic distribution deduced from the residual stress. © 1990.

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页码：54 / 60

页数：7

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