CHARACTERIZATION OF SHORT-RANGE LEAKAGE CURRENTS IN UNDOPED POLYCRYSTALLINE SI BY MEANS OF CAPACITANCE-VOLTAGE MEASUREMENT

被引：1

作者：

ALPERN, Y

SHAPPIR, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1524 / 1526

页数：3

共 9 条

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