ELASTIC-MODULUS OF AND RESIDUAL-STRESSES IN DIAMOND FILMS

被引：25

作者：

CHIU, CC ^{[1
]}

LIOU, Y ^{[1
]}

JUANG, YD ^{[1
]}

机构：

[1] ACAD SINICA,INST PHYS,TAIPEI,TAIWAN

来源：

THIN SOLID FILMS | 1995年 / 260卷 / 01期

关键词：

COATINGS; DIAMOND; ELASTIC PROPERTIES; STRESS;

D O I：

10.1016/0040-6090(94)06457-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond thin films were prepared using microwave-enhanced chemical vapor deposition techniques with different concentration ratios of CH4 to H-2 at temperatures of 800 degrees C and 900 degrees C. The elastic modulus of the films varies non-linearly with the change in the ratio of CH4 to H-2, and is not significantly affected by changes in the process temperature. Compressive and tensile residual stresses develop in the films prepared at 800 degrees C and 900 degrees C, respectively. The magnitude of the stresses is a function of the CH4/H-2 ratio. An analysis of Raman spectra reveals that the quality of the films is influenced by the CH4/H-2 ratio.

引用

页码：118 / 123

页数：6

共 19 条

[1] STUDIES OF STRESS RELATED ISSUES IN MICROWAVE CVD DIAMOND ON (100) SILICON SUBSTRATES [J].

BAGLIO, JA ;

FARNSWORTH, BC ;

HANKIN, S ;

HAMILL, G ;

ONEIL, D .

THIN SOLID FILMS, 1992, 212 (1-2) :180-185

[2]

BERRY BS, 1990, APPL PHYS LETT, V16, P302

[3] STRESS-RELAXATION DURING THERMAL CYCLING IN METAL POLYIMIDE LAYERED FILMS [J].

CHEN, ST ;

YANG, CH ;

FAUPEL, F ;

HO, PS .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6690-6698

[4] RESIDUAL-STRESSES IN CERAMIC COATINGS AS DETERMINED FROM THE CURVATURE OF A COATED STRIP [J].

CHIU, CC .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1992, 150 (01) :139-148

[5] ELASTIC-MODULUS DETERMINATION OF COATING LAYERS AS APPLIED TO LAYERED CERAMIC COMPOSITES [J].

CHIU, CC ;

CASE, ED .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 132 :39-47

[6] MEASUREMENT OF RESIDUAL-STRESSES IN FILMS OF UNKNOWN ELASTIC-MODULUS [J].

CUTHRELL, RE ;

GERSTLE, FP ;

MATTOX, DM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (06) :1018-1020

[7]

DAMME NSV, 1991, APPL PHYS LETT, V58, P2929

[8] CHARACTERISTICS AND ORIGIN OF THE 1.681 EV LUMINESCENCE CENTER IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS [J].

FENG, T ;

SCHWARTZ, BD .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) :1415-1425

[9] CHARACTERIZATION OF DIAMOND FILMS BY RAMAN-SPECTROSCOPY [J].

KNIGHT, DS ;

WHITE, WB .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) :385-393

[10] SIO2 FILM STRESS-DISTRIBUTION DURING THERMAL-OXIDATION OF SI [J].

KOBEDA, E ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :574-578

← 1 2 →