SPACE-CHARGE-LIMITED CURRENT FLOW THROUGH SEMIINSULATING GALLIUM-ARSENIDE

被引：4

作者：

LEHOVEC, K

BAO, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 05期

关键词：

D O I：

10.1016/0038-1101(87)90201-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：479 / 483

页数：5

共 12 条

[1]

BIRRITTELLA MS, 1982, IEEE T ELECTRON DEV, V3, P1135

[2]

HORIO K, 1984, 2 S EL ENG EL S6, V34

[3] SELENIUM IMPLANTATION IN EPITAXIAL GALLIUM-ARSENIDE LAYERS [J].

INADA, T ;

TOKUNAGA, K ;

TAKA, S ;

YUGE, Y ;

KOHZU, H .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :709-717

[4] BEAM COUPLING IN UNDOPED GAAS AT 1.06-MU-M USING THE PHOTOREFRACTIVE EFFECT [J].

KLEIN, MB .

OPTICS LETTERS, 1984, 9 (08) :350-352

[5] INJECTION CURRENTS IN INSULATORS [J].

LAMPERT, MA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08) :1781-&

[6] SHIELDING OF BACKGATING EFFECTS IN GAAS INTEGRATED-CIRCUITS [J].

LEE, CP ;

CHANG, MF .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :169-171

[7]

LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[8]

LUKYANCHENKO AI, 1985, SOV PHYS SEMICOND+, V19, P538

[9]

MOTTET S, 1984, SEMIINSULATING 3 5 M

[10]

OAVANZO DC, 1982, IEEE T ELECTRON DEV, V29, P1051

← 1 2 →