SELENIUM IMPLANTATION IN EPITAXIAL GALLIUM-ARSENIDE LAYERS

被引：5

作者：

INADA, T ^{[1
]}

TOKUNAGA, K ^{[1
]}

TAKA, S ^{[1
]}

YUGE, Y ^{[1
]}

KOHZU, H ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV SEMICOND,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90800-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：709 / 717

页数：9

共 13 条

[1]

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EISEN, FH ;

WELCH, BM .

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[4]

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[8] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].

INADA, T ;

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TAKA, S .

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[9]

INADA T, 1980, APR SPRING M JAP I A

[10] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

GIBBONS, JF ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

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