QUANTITATIVE SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILING OF TISI2 FILMS

[1] BLATTNER RJ, 1980, SCANNING ELECTRON MI, V4, P55

[2] BOUDWIJN P, 1986, SECONARY ION MASS SP, V5, P270

[3] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1451 - 1458

[4] CHARACTERIZATION AND REMOVAL OF ION YIELD TRANSIENTS IN THE NEAR-SURFACE REGION OF SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01): : 9 - 14

[5] MECHANISM OF SIMS MATRIX EFFECT [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 832 - 835

[6] NEUTRON DEPTH PROFILING AT THE NATIONAL BUREAU OF STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 47 - 51

[7] OXIDE BOND-ENERGIES FOR THE CALIBRATION OF MATRIX EFFECTS IN SECONDARY ION MASS-SPECTROMETRY [J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1984, 61 (01): : 59 - 70

[8] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1983, 55 (13) : 2051 - 2055

[9] GALUSKA AA, 1986, SECONARDY ION MASS S, V5, P363

[10] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1634 - 1639

[1] BLATTNER RJ, 1980, SCANNING ELECTRON MI, V4, P55

[2] BOUDWIJN P, 1986, SECONARY ION MASS SP, V5, P270

[3] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1451 - 1458

[4] CHARACTERIZATION AND REMOVAL OF ION YIELD TRANSIENTS IN THE NEAR-SURFACE REGION OF SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01): : 9 - 14

[5] MECHANISM OF SIMS MATRIX EFFECT [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 832 - 835

[6] NEUTRON DEPTH PROFILING AT THE NATIONAL BUREAU OF STANDARDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 47 - 51

[7] OXIDE BOND-ENERGIES FOR THE CALIBRATION OF MATRIX EFFECTS IN SECONDARY ION MASS-SPECTROMETRY [J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1984, 61 (01): : 59 - 70

[8] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1983, 55 (13) : 2051 - 2055

[9] GALUSKA AA, 1986, SECONARDY ION MASS S, V5, P363

[10] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1634 - 1639