NOVEL MECHANISM OF A REAL-SPACE TRANSFER OSCILLATOR

被引:28
作者
SCHOLL, E [1 ]
AOKI, K [1 ]
机构
[1] KOBE UNIV,DEPT ELECT ENGN,KOBE 657,JAPAN
关键词
D O I
10.1063/1.104335
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new mechanism for self-generated current oscillations in modulation-doped semiconductor heterostructures under parallel conduction is proposed. It is based upon the nonlinear dynamics of real-space electron transfer and delayed dielectric relaxation of the interface potential barrier resulting from the space charge in the doped AlGaAs layer. From our simulations we predict current oscillations in the 20-80 GHz range under dc bias.
引用
收藏
页码:1277 / 1279
页数:3
相关论文
共 14 条
[1]   COMPLEX DYNAMICAL BEHAVIOR AND CHAOS IN THE HESS OSCILLATOR [J].
AOKI, K ;
YAMAMOTO, K ;
MUGIBAYASHI, N ;
SCHOLL, E .
SOLID-STATE ELECTRONICS, 1989, 32 (12) :1149-1153
[2]   DEMONSTRATION OF A NEW OSCILLATOR BASED ON REAL-SPACE TRANSFER IN HETEROJUNCTIONS [J].
COLEMAN, PD ;
FREEMAN, J ;
MORKOC, H ;
HESS, K ;
STREETMAN, B ;
KEEVER, M .
APPLIED PHYSICS LETTERS, 1982, 40 (06) :493-495
[3]  
GRIBNIKOV ZS, 1973, SOV PHYS SEMICOND+, V6, P1204
[4]   ELECTRIC-FIELD INDUCED PARALLEL CONDUCTION IN GAAS ALGAAS HETEROSTRUCTURES [J].
HENDRIKS, P ;
ZWAAL, EAE ;
DUBOIS, JGA ;
BLOM, FAP ;
WOLTER, JH .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) :302-306
[5]   NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].
HESS, K ;
MORKOC, H ;
SHICHIJO, H ;
STREETMAN, BG .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471
[6]   NEW FEATURES OF REAL-SPACE HOT-ELECTRON TRANSFER IN THE NERFET [J].
KASTALSKY, A ;
MILSHTEIN, M ;
SHANTHARAMA, LG ;
HARBISON, J ;
FLOREZ, L .
SOLID-STATE ELECTRONICS, 1989, 32 (12) :1841-1844
[7]   MEASUREMENTS OF HOT-ELECTRON CONDUCTION AND REAL-SPACE TRANSFER IN GAAS-ALXGA1-X AS HETEROJUNCTION LAYERS [J].
KEEVER, M ;
SHICHIJO, H ;
HESS, K ;
BANERJEE, S ;
WITKOWSKI, L ;
MORKOC, H ;
STREETMAN, BG .
APPLIED PHYSICS LETTERS, 1981, 38 (01) :36-38
[8]   GATE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE IN DRAIN CURRENT CHARACTERISTICS OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS [J].
LASKAR, J ;
KETTERSON, AA ;
BAILLARGEON, JN ;
BROCK, T ;
ADESIDA, I ;
CHENG, KY ;
KOLODZEY, J .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :528-530
[9]  
PACHA F, 1978, ELECTRON COMMUN, V32, P235