NEW FEATURES OF REAL-SPACE HOT-ELECTRON TRANSFER IN THE NERFET

被引：10

作者：

KASTALSKY, A

MILSHTEIN, M

SHANTHARAMA, LG

HARBISON, J

FLOREZ, L

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90322-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1841 / 1844

页数：4

共 7 条

[1]

FRANK DJ, 1986, P INT C HIGH SPEED E, P140

[2] OBSERVATION OF THE TRANSITION ASSOCIATED WITH REAL-SPACE TRANSFER OF A TWO-DIMENSIONAL ELECTRON-GAS TO A 3-DIMENSIONAL ELECTRON-DISTRIBUTION IN SEMICONDUCTOR HETEROLAYERS [J].

HIGMAN, TK ;

MANION, SJ ;

KIZILYALLI, IC ;

EMANUEL, MA ;

HESS, K ;

COLEMAN, JJ .

PHYSICAL REVIEW B, 1987, 36 (17) :9381-9383

[3] A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE [J].

KASTALSKY, A ;

LURYI, S ;

GOSSARD, AC ;

HENDEL, R .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :57-60

[4] HIGH-FREQUENCY AMPLIFICATION AND GENERATION IN CHARGE INJECTION DEVICES [J].

KASTALSKY, A ;

ABELES, JH ;

BHAT, R ;

CHAN, WK ;

KOZA, MA .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :71-73

[5] NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].

KASTALSKY, A ;

LURYI, S .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :334-336

[6]

KASTALSKY A, 1986, IEEE T ELECTRON DEV, V31, P832

[7] NEW NEGATIVE-RESISTANCE REGIME OF HETEROSTRUCTURE INSULATED GATE TRANSISTOR (HIGFET) OPERATION [J].

SHUR, MS ;

ARCH, DK ;

DANIELS, RR ;

ABROKWAH, JK .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :78-80

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