EFFECTS OF OXIDE-CHARGE SPACE CORRELATION ON ELECTRON-MOBILITY IN INVERSION-LAYERS

被引：17

作者：

GAMIZ, F

MELCHOR, I

PALMA, A

CARTUJO, P

LOPEZVILLANUEVA, JA

机构：

[1] Dept. de Electron. y Tecnologia de Computadores, Granada Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.

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收藏

页码：1102 / 1107

页数：6

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