KINETICS OF FORMATION OF SULFUR DIMERS IN PURE SF6 AND SF6-O2 DISCHARGES

被引：24

作者：

SADEGHI, N ^{[1
]}

DEBONTRIDE, H ^{[1
]}

TURBAN, G ^{[1
]}

PEIGNON, MC ^{[1
]}

机构：

[1] UNIV NANTES,CNRS,IPCM,UMR 110,PLASMAS & COUCHES MINCES LAB,F-44072 NANTES 03,FRANCE

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1990年 / 10卷 / 04期

关键词：

mass spectroscopy; optical emission spectroscopy; SF[!sub]6[!/sub] discharge; Sulphur hexafluoride;

D O I：

10.1007/BF01447264

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

The emission band spectra of S, molecule (B3ζu- → X3ζg- transition) and of SO molecule (A3π→ X3ζ-) were detected in SF6 and SF6-O2 rf discharges. It has been observed that the presence of a material which can be etched by SF6 products considerably enhances the density of S2 in the reactor. By means of mass spectrometry it has been shown that the m/e =83 mu signal assigned to S2F4 ions evolves exactly in the same manner as the S2 band intensity during the etching of Si or W in SF6-O2 discharge. A reaction scheme involving S2F radicals is proposed to explain these experimental results. © 1991 Plenum Publishing Corporation.

引用

页码：553 / 569

页数：17

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