SILICON ELECTRODES COATED WITH EXTREMELY SMALL PLATINUM ISLANDS FOR EFFICIENT SOLAR-ENERGY CONVERSION

被引:33
作者
UEDA, K [1 ]
NAKATO, Y [1 ]
SUZUKI, N [1 ]
TSUBOMURA, H [1 ]
机构
[1] OSAKA UNIV,FAC ENGN SCI,DEPT CHEM,TOYONAKA,OSAKA 560,JAPAN
关键词
D O I
10.1149/1.2097300
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2280 / 2285
页数:6
相关论文
共 30 条
[1]  
BUHLER N, 1984, J PHYS CHEM-US, V88, P3261, DOI 10.1021/j150659a025
[2]  
BUHLER N, 1984, J PHYS CHEM-US, V88, P5903
[3]   EFFECT OF IMPURITIES ON THE PTSI-SI INTERFACE AND THE PTSI SURFACE [J].
CRIDER, CA ;
POATE, JM ;
ROWE, JE ;
SHENG, TT ;
FERRIS, SD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :433-436
[4]   PLATINUM SILICIDE FORMATION - ELECTRON-SPECTROSCOPY OF PLATINUM-PLATINUM SILICIDE INTERFACE [J].
DANYLUK, S ;
MCGUIRE, GE .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5141-5144
[5]  
FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P210
[6]   SEMICONDUCTOR ELECTRODES .46. STABILIZATION OF N-SILICON ELECTRODES IN AQUEOUS-SOLUTION PHOTO-ELECTROCHEMICAL CELLS BY FORMATION OF PLATINUM SILICIDE LAYERS [J].
FAN, FRF ;
HOPE, GA ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1647-1649
[7]   SEMICONDUCTOR ELECTRODES .48. PHOTO-OXIDATION OF HALIDES AND WATER ON N-SILICON PROTECTED WITH SILICIDE LAYERS [J].
FAN, FRF ;
KEIL, RG ;
BARD, AJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (02) :220-224
[8]  
Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115
[9]   EFFECTS OF A THIN SIO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS [J].
GOODNICK, SM ;
FATHIPOUR, M ;
ELLSWORTH, DL ;
WILMSEN, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :949-954
[10]  
HODES G, 1984, ADV ELECTROCH EL ENG, V13, P113