EFFECT OF IMPURITIES ON THE PTSI-SI INTERFACE AND THE PTSI SURFACE

被引：9

作者：

CRIDER, CA ^{[1
]}

POATE, JM ^{[1
]}

ROWE, JE ^{[1
]}

SHENG, TT ^{[1
]}

FERRIS, SD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：433 / 436

页数：4

共 13 条

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WONSIDLER, DR ;

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CONLEY, DK ;

TISONE, TC .

THIN SOLID FILMS, 1976, 37 (03) :441-452

[2] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].

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EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45

[3] UHV CHAMBER FOR METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STUDIES [J].

CRIDER, CA ;

POATE, JM ;

ROWE, JE ;

WHEATLEY, GH .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :701-704

[4] UHV FACILITY FOR METAL-SEMICONDUCTOR THIN-FILM STUDIES [J].

CRIDER, CA ;

POATE, JM ;

ROWE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :215-218

[5]

CRIDER CA, 1979, FAL P S THIN FILM IN

[6]

CRIDER CA, 1979, THESIS PRINCETON U P

[7]

CRIDER CA, UNPUBLISHED

[8] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

FELDMAN, LC ;

SILVERMAN, PJ ;

WILLIAMS, JS ;

JACKMAN, TE ;

STENSGAARD, I .

PHYSICAL REVIEW LETTERS, 1978, 41 (20) :1396-1399

[9]

Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[10]

MAYER JW, 1977, ION BEAM HDB MATERIA

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