POST-METALLIZATION ANNEALING OF METAL-TUNNEL OXIDE-SILICON DIODES

被引：26

作者：

LUNDGREN, P ^{[1
]}

ANDERSSON, MO ^{[1
]}

FARMER, KR ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,DEPT PHYS,NEWARK,NJ 07102

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.355311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a post-metallization annealing study of very thin oxide (2.4-3.2 nm), aluminum gate metal-tunnel oxide-(p) silicon devices. Voltage dependence measurements of both tunnel current and high-frequency capacitance as functions of anneal time and temperature reveal that annealing the thin oxide devices after metallization leads to a decrease in interface state density, with dynamics which are similar to, though slower than, what has been observed in thicker oxide aluminum gate systems.

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页码：4780 / 4782

页数：3

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