PHOTORESPONSES OF MOS-FET

被引：16

作者：

OKAMOTO, K ^{[1
]}

INOUE, S ^{[1
]}

机构：

[1] UNIV ELECTRO COMMUN,TOKYO,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 06期

关键词：

D O I：

10.1016/0038-1101(73)90107-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 662

页数：6

共 12 条

[1]

ALTMAN L, 1970, ELECTRONICS, V43, P112

[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[3] CHARGE-COUPLED DEVICES - NEW APPROACH TO MIS DEVICE STRUCTURES [J].

BOYLE, WS ;

SMITH, GE .

IEEE SPECTRUM, 1971, 8 (07) :18-&

[4] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[5]

GROSVALET J, 1967, IEEE T ELECTRON DEVI, VED14, P777

[6] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

GROVE, AS ;

FITZGERALD, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+

[7]

KOOI E, 1967, SURFACE PROPERTIES O

[8] MEASUREMENT OF INTERFACE STATE CHARGE IN MOS SYSTEM [J].

KOOMEN, J .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :571-+

[9] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J].

MONTILLO, F ;

BALK, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1463-+

[10]

OKAMOTO H, 1970, IEEE T ELECTRON DEVI, VED17, P83

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