THE INFLUENCE OF THE SOLUBILITY LIMIT ON DIFFUSION OF PHOSPHORUS AND ARSENIC INTO SILICON

被引：21

作者：

ANTONCIK, E

机构：

[1] Institute of Physics and Astronomy, University of Aarhus, Aarhus C

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 02期

关键词：

D O I：

10.1007/BF00332167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The problem of the diffusion mechanism controlling diffusion of phosphorus and arsenic into silicon at very high concentrations has been reexamined in terms of a system of reaction-diffusion equations. The role of the solubility limit in particular has been investigated since it represents a certain threshold, at which some of the quasichemical reactions involved (abruptly) change their character. The corresponding solutions make it possible to calculate the concentration profiles for both the electrically active and inactive impurities as a function of time and predeposition. Especially the formation of the plateau of electrically active dopants is discussed in detail together with the distribution of electrically inactive precipitates in the neighbourhood of the surface. Finally a new interpretation of the origin of the ''kink'' and the tail of the phosphorus profile is given.

引用

页码：117 / 123

页数：7

共 29 条

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