REAL-TIME OBSERVATION OF SURFACE DIELECTRIC RESPONSES OF GAAS(001) USING SURFACE PHOTOABSORPTION

被引：3

作者：

UWAI, K

KOBAYASHI, N

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90230-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface photo-absorption is used to observe the changes in isotropic and anisotropic surface dielectric responses caused by As desorption during surface conversion from c(4 x 4) to (2 x 4) gamma of As-stabilized GaAs(001) surfaces. The anisotropic part agrees with the change in the surface dielectric anisotropy spectrum observed in reflectance-difference measurements during this surface conversion. The spectral evolutions of surface dielectric response are observed in real time with a time resolution of 0.1 s during surface conversion.

引用

页码：290 / 297

页数：8

共 31 条

[1] TEMPORAL AND SPECTRAL DEPENDENCES OF THE ANISOTROPIC DIELECTRIC RESPONSES OF SINGULAR AND VICINAL (001) GAAS-SURFACES DURING INTERRUPTED MOLECULAR-BEAM EPITAXY GROWTH [J].