LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON

被引：25

作者：

STUTZMANN, M

HARSANYI, J

BREITSCHWERDT, A

HERRERO, CP

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1667 / 1669

页数：3

共 16 条

[1] SURFACE-LAYER SWELLING ON IMPLANTATION OF HYDROGEN-IONS INTO SILICON AT DIFFERENT DOPING CONCENTRATIONS
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[2] BUBLIK VT, 1969, FIZ TVERD TELA+, V10, P2247
[3] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS
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CHRISTENSEN, NE
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[4] CORRECTION
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[5] PHYSICAL-PROPERTIES OF ION-IMPLANTED LASER ANNEALED NORMAL-TYPE GERMANIUM
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CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 131 (02): : 475 - 487
[6] INVESTIGATION OF ION-IMPLANTATION DAMAGE WITH X-RAY DOUBLE REFLECTION
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 141 - 143
[7] STRUCTURE OF THE BORON-HYDROGEN COMPLEX IN CRYSTALLINE SILICON
MARWICK, AD
OEHRLEIN, GS
JOHNSON, NM
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4539 - 4542
[8] LATTICE CONTRACTION COEFFICIENT OF BORON AND PHOSPHORUS IN SILICON
MCQUHAE, KG
BROWN, AS
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 259 - &
[9] ORIENTATION DEPENDENCE OF LATTICE STRAIN IN SILICON EPITAXIAL WAFERS
MIHARA, M
HARA, T
ARAI, M
NAKAJIMA, M
NAKAMURA, S
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 1 - 3
[10] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
WANCE, RO
BERKEYHEISER, JE
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1100 - 1102

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