LATTICE LOCATION OF N ATOMS IN HEAVILY N-DOPED ZNSE STUDIED WITH ION-BEAMS ANALYSIS AND ITS IMPLICATION ON DEEP-LEVEL DEFECTS

Molecular beam epitaxially grown ZnSe doped with N-15 as high as 1.5 x 10(20) cm-3 is characterized by means of ion beam analysis technique. Resonant nuclear reaction of N-15(p, alphagamma)C-12 is utilized to detect N-15, while particle induced X-ray emission (PIXE) is detected to get insight into the effect of N-doping on the lattice location of Zn and Se atoms. It is demonstrated that the incorporated N atoms are located at the substitutional sites and that both Zn and Se atoms are located at the substitutional sites. The results suggest that the carrier compensation in heavily N-doped ZnSe is not caused by such donors as N(int) or N(Se)-Zn(int), but by complex defects which include donor-type complexes such as N(Se)-Zn-V(Se) and/or N(Zn)-N(Se). It is also suggested that a cluster of N(Se) such as (N(Se))n-Zn may play a role as a deep acceptor.