ANOMALOUS REDUCTION OF LATTICE-PARAMETER BY RESIDUAL IMPURITY BORON IN UNDOPED CZOCHRALSKI-GROWN GAAS

被引：16

作者：

OKADA, Y ^{[1
]}

ORITO, F ^{[1
]}

机构：

[1] MITSUBISHI CHEM IND,USHIKU,IBARAKI 30021,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：582 / 583

页数：2

共 23 条

[1] PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[2]

Bublik V. T., 1973, Soviet Physics - Crystallography, V18, P218

[3] VACANCY INTERACTIONS IN GAAS [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :591-594

[4]

FARGES JP, 1982, SEMIINSULATING 3 5 M, P45

[5]

HONMA Y, 1985, J APPL PHYS, V57, P2931

[6] CORRELATION OF GAAS LATTICE-PARAMETER TO GROWTH AND ANNEALING CONDITIONS [J].

KUWAMOTO, H ;

HOLMES, DE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :656-658

[7] LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS [J].

MULLIN, JB ;

STRAUGHAN, BW ;

DRISCOLL, CMH ;

WILLOUGHBY, AFW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2584-2587

[8]

NAKAJIMA M, 1986, SEMIIINSULATING IIII, P181

[9] NONSTOICHIOMETRY OF TE-DOPED GAAS [J].

NISHIZAWA, JI ;

OTSUKA, H ;

YAMAKOSHI, S ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :46-56

[10] PRECISE DETERMINATION OF LATTICE-PARAMETER AND THERMAL-EXPANSION COEFFICIENT OF SILICON BETWEEN 300-K AND 1500-K [J].

OKADA, Y ;

TOKUMARU, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :314-320

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