ACCEPTOR COMPENSATION MECHANISM BY MIDGAP DEFECTS IN NITROGEN-DOPED ZNSE FILMS

被引：19

作者：

OHKI, A

KAWAGUCHI, Y

ANDO, K

KATSUI, A

机构：

[1] NTT Opto-Electronics Laboratories, Tokai

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new carrier compensation mechanism has been investigated in nitrogen-doped ZnSe films grown by low-pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N-doped, highly compensated films. These results combined with photo-Hall measurements (under infrared illumination) have revealed that these midgap defect . levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.

引用

页码：671 / 673

页数：3

共 9 条

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