HIGH-CONCENTRATION NITROGEN DOPING IN MOVPE GROWN ZNSE

被引：13

作者：

OHKI, A

SHIBATA, N

ANDO, K

KATSUI, A

机构：

[1] NTT Optoelectronics Laboratories, Tokai, Ibaraki-ken

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90554-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nitrogen-doped ZnSe films have been grown on (100) GaAs substrates by MOVPE using diethylzinc (DEZ) and hydrogen selenide as reactants. NH3 gas was used as a dopant source. The nitrogen concentrations of these films, determined using SIMS (secondary ion mass spectroscopy) analysis, were up to 2×1019 cm-3. PL spectra and X-ray diffraction measurements have revealed marked changes in both film crystallinities and PL characteristics. Nitrogen doping exceeding 1×1018 cm-3 causes a deterioration of film crystallinity due to the formation of nitrogen related complex defects. It is found that the thermal annealing after growth was effective for the recovery of the crystallinity of the nitrogen-dopen ZnSe films. © 1990.

引用

页码：413 / 417

页数：5

共 13 条

[1] DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J].

BHARGAVA, RN ;

SEYMOUR, RJ ;

FITZPATRICK, BJ ;

HERKO, SP .

PHYSICAL REVIEW B, 1979, 20 (06) :2407-2419

[2] GROWTH OF PARA-TYPE AND NORMAL-TYPE ZNSE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

HAASE, MA .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :512-516

[3] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

SMITH, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149

[4] P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].

NISHIZAWA, J ;

SUZUKI, R ;

OKUNO, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2256-2258

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NITROGEN-DOPED ZNSE WITH ION DOPING TECHNIQUE [J].

OHKAWA, K ;

MITSUYU, T ;

YAMAZAKI, O .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :329-334

[6] NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

OHKI, A ;

SHIBATA, N ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05) :L909-L912

[7] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

MAR, HA ;

SALANSKY, NM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1047-1049

[8] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J].

SHIBATA, N ;

OHKI, A ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08) :1305-1309

[9] USE OF ETHYLIODIDE IN PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SHIBATA, N ;

OHKI, A ;

ZEMBUTSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (02) :L251-L253

[10] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9

← 1 2 →