DIFFERENTIATION OF ELECTRON-PARAMAGNETIC-RESONANCE SIGNALS OF ARSENIC ANTISITE DEFECTS IN GAAS

被引：8

作者：

HOINKIS, M ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3872

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3872 / 3877

页数：6

共 12 条

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[8] EFFECT OF PLASTIC-DEFORMATION ON ELECTRONIC-PROPERTIES OF GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3791 - 3798
[9] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS
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[10] Weber E. R., 1984, Semi-Insulating III-V materials, P296