DOPING AND HYDROGENATION BY ION-IMPLANTATION OF GLOW-DISCHARGE DEPOSITED AMORPHOUS-SILICON FILMS

We have studied the effects of ion implanting boron into glow discharge deposited hydrogenated amorphous silicon films (a-Si:H). Electrical activity more than two orders of magnitude higher than previously reported1 is measured in our samples. Implantations of Si ions are used to study the effect of post-annealing on the radiation damage. Hydrogen introduced by low-energy implantation and diffusion is found to completely recover electrical and optical characteristics in Si-implanted specimens even at the highest concentrations (1021/cm3), where annealing for 1 h at 260 °C was insufficient. Introduction of H in B-implanted samples was found to deactivate the boron, which can be reactivated by low-temperature annealing.