INTERACTION OF SI3N4 WITH TITANIUM POWDER

[1] THIN-FILM REACTION BETWEEN TI AND SI3N4 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 953 - 955

[2] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 781 - 784

[3] GOTMAN I, 1989, IN PRESS POWER METAL, V21

[4] Moffatt W.G., 1981, HDB BINARY PHASE DIA

[5] INTERACTIONS OF THIN TI FILMS WITH SI, SIO2, SI3N4, AND SIOXNY UNDER RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 344 - 353

[6] REACTION OF TITANIUM WITH SILICON-NITRIDE UNDER RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1236 - 1238

[7] NICKHOLET MA, 1983, VLSI ELECTRONICS MIS, V6, P329

[8] VALLARS P, 1986, PEARSONS HDB CRYSTAL, V3

[1] THIN-FILM REACTION BETWEEN TI AND SI3N4 [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 953 - 955

[2] PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 781 - 784

[3] GOTMAN I, 1989, IN PRESS POWER METAL, V21

[4] Moffatt W.G., 1981, HDB BINARY PHASE DIA

[5] INTERACTIONS OF THIN TI FILMS WITH SI, SIO2, SI3N4, AND SIOXNY UNDER RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 344 - 353

[6] REACTION OF TITANIUM WITH SILICON-NITRIDE UNDER RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1236 - 1238

[7] NICKHOLET MA, 1983, VLSI ELECTRONICS MIS, V6, P329

[8] VALLARS P, 1986, PEARSONS HDB CRYSTAL, V3