KRF EXCIMER LASER ANNEALED TFT WITH VERY HIGH FIELD-EFFECT MOBILITY OF 329 CM2/V.S

被引：21

作者：

ZHANG, HY ^{[1
]}

KUSUMOTO, N ^{[1
]}

INUSHIMA, T ^{[1
]}

YAMAZAKI, S ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CORP,BUNKYO KU,TOKYO 113,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 05期

关键词：

D O I：

10.1109/55.145059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin-film transistor (TFT) with a maximum field-effect mobility of 329 CM2/V.s, an on/off current ratio of 7.6 x 10(7), a threshold voltage of 6.7 V, and a subthreshold slope of 0.37 V/decade was fabricated by using pulse laser annealing processes. Amorphous silicon film (a-Si:H) with a very low impurity concentration of 4 x 10(18) cm-3 for oxygen, 1.5 x 10(18) cm-3 for carbon, and 2 x 10(17) cm-3 for nitrogen was deposited by plasma CVD method and annealed by KrF Excimer laser (wavelength of 248 nm). The Raman spectroscopy technique was a useful tool for optimizing laser annealing conditions. Experimental results show that two factors are very important for fabricating very-high mobility TFT's: 1) utilizing high-purity as-deposited a-Si:H film, and 2) performing whole laser annealing processes sequentially in a vacuum container and optimizing illumination conditions.

引用

页码：297 / 299

页数：3

共 7 条

[1] RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON [J].