DOPING OF EVAPORATED AMORPHOUS SILICON FILMS

被引：18

作者：

BEYER, W

机构：

[1] Fachvereich Physik der Universität Marburg, Renthof 5

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)91059-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that evaporated amorphous silicon films can be doped interstitially by ion implantation and in-diffusion of lithium. The doping effect is smaller than for glow discharge silicon films, and the doped state is less stable at elevated temperature. This is explained by precipitation as well as out-diffusion effects in connection with the high defect concentration in evaporated films. © 1979.

引用

页码：291 / 294

页数：4

共 15 条

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